He momo hou o te maramara mahara ferroelectric-hafnium i hangaia, i hangaia e Liu Ming, Academician o te Institute of Microelectronics, kua whakaatuhia ki te IEEE International Solid-State Circuits Conference (ISSCC) i te tau 2023, te taumata teitei o te hoahoa ara iahiko whakauru.
Ko te mahara-kore-kore (eNVM) kua whakauruhia he mahi nui kei te hiahia nui mo nga maramara SOC i roto i nga hikohiko kaihoko, waka motuhake, whakahaere ahumahi me nga taputapu taha mo te Ipurangi o nga Mea.Ko te mahara ferroelectric (FeRAM) he painga o te ti'aturi nui, te iti o te kaha o te kaha, me te tere tere.Ka whakamahia nuitia i roto i te maha o nga rekoata raraunga i roto i te waa tuuturu, te panui me te tuhi raraunga auau, te iti o te kohi hiko me nga hua SoC/SiP kua whakauruhia.Ko te mahara ferroelectric i runga i nga rauemi PZT kua tutuki te hanga papatipu, engari kaore i te hototahi ki te hangarau CMOS me te uaua ki te whakaheke, e arahi ana ki te whakawhanaketanga o te mahara ferroelectric tuku iho ka tino arai, me te whakauru whakauru me whai tautoko raina whakaputa motuhake, uaua ki te rongonui. i runga i te tauine nui.Ko te iti o te mahara ferroelectric hou e ahu mai ana i te hafnium me tona hototahitanga ki te hangarau CMOS ka waiho hei waahi rangahau mo te maaharahara noa i roto i nga whare wananga me nga umanga.Ko te mahara ferroelectric e ahu mai ana i te Hafnium kua kiia he ahunga whanaketanga nui mo te reanga o muri o te mahara hou.I tenei wa, he raru tonu te rangahau o te mahara ferroelectric e ahu mai ana i te hafnium penei i te kore rawa o te pono o te waeine, te kore o te hoahoa maramara me te ara iahiko peripheral oti, me te whakamana ano i nga mahi taumata maramara, e whakawhāiti ana i tana tono i roto i te eNVM.
Ko te whai ki nga wero e pa ana ki te mahara ferroelectric e pa ana ki te hafnium, kua hangaia e te roopu o Academician Liu Ming mai i te Institute of Microelectronics te maramara whakamatautau FeRAM megab-nui mo te wa tuatahi i te ao i runga i te papahanga whakauru nui. o te mahara ferroelectric i runga i te hafnium e hototahi ana ki te CMOS, me te whakaoti angitu i te whakaurunga nui o te HZO ferroelectric capacitor i roto i te tukanga 130nm CMOS.He ara iahiko puku tuhi awhina a ECC mo te whakamaarama i te pāmahana me te ara iahiko whakakaha tairongo mo te whakakore i te whakahiato aunoa, ka puta ko te 1012 te roanga o te huringa me te 7ns te tuhi me te 5ns te taima panui kua tutuki, koinei nga taumata pai rawa atu kua puta.
Ko te pepa "He 9-Mb HZO-based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh" i runga i nga hua me te Offset-Canceled Sense Amplifier "i tohua i roto i te ISSCC 2023, a i tohua te maramara i roto i te ISSCC Demo Session hei whakaatu i te huihuinga.Ko Yang Jianguo te kaituhi tuatahi o te pepa, ko Liu Ming te kaituhi.
Ko nga mahi e pa ana kei te tautokohia e te National Natural Science Foundation o Haina, te National Key Research and Development Programme o te Manatu Putaiao me te Hangarau, me te B-Class Pilot Project o te Chinese Academy of Sciences.
(Whakaahua o 9Mb Hafnium-based FeRAM chip and chip performance test)
Te wa tuku: Apr-15-2023