He momo hou o te maramara mahara ferroelectric e ahu mai ana i te hafnium i hangaia, i hangaia e Liu Ming, Academician o te Institute of Microelectronics, kua whakaatuhia i te IEEE International Solid-State Circuits Conference (ISSCC) i te tau 2023, te taumata teitei o te hoahoa ara iahiko whakauru.
Ko te mahara-kore-kore (eNVM) kua whakauruhia he mahi nui kei te hiahia nui mo nga maramara SOC i roto i nga hikohiko kaihoko, waka motuhake, whakahaere ahumahi me nga taputapu taha mo te Ipurangi o nga Mea. Ko te mahara o te Ferroelectric (FeRAM) nga painga o te ti'aturi nui, te kaha o te kaha-iti, me te tere tere. Ka whakamahia nuitia i roto i te maha o nga rekoata raraunga i roto i te waa tuuturu, te panui me te tuhi raraunga auau, te iti o te kohi hiko me nga hua SoC/SiP kua whakauruhia. mahara Ferroelectric i runga i te rauemi PZT kua tutuki hanga papatipu, engari he hotokore ki CMOS hangarau me te uaua ki te holomui ona rauemi, ārahi ki te tukanga whanaketanga o te mahara ferroelectric tuku iho te tino arai, me te whakauru whakauru hiahia he tautoko raina production motuhake, uaua ki te rongonui i runga i te tauine nui. Ko te iti o te mahara ferroelectric hou e ahu mai ana i te hafnium me tona hototahitanga ki te hangarau CMOS ka waiho hei waahi rangahau mo te maaharahara noa i roto i nga whare wananga me nga umanga. Ko te mahara ferroelectric e ahu mai ana i te Hafnium kua kiia he huarahi whanaketanga nui mo te reanga hou o te mahara hou. I tenei wa, he raru tonu te rangahau o te mahara ferroelectric e ahu mai ana i te hafnium penei i te kore rawa o te pono o te waeine, te kore o te hoahoa maramara me te ara iahiko peripheral oti, me te whakamana ano i nga mahi taumata maramara, e whakawhāiti ana i tana tono i roto i te eNVM.
Ko te whai ki nga wero e pa ana ki te mahara ferroelectric e ahu mai ana i te hafnium, kua hangaia e te roopu a Academician Liu Ming mai i te Institute of Microelectronics te maramara whakamatautau FeRAM megab-nui mo te wa tuatahi i te ao i runga i te papa whakaurunga nui o te mahara ferroelectric e ahu mai ana i te hafnium-a-hafnium, kua oti pai ki te CMOS te whakaurunga nui o te HMOS. pūnga hiko ferroelectric i roto i te tukanga CMOS 130nm. He ara iahiko puku tuhi awhina a ECC mo te whakamaarama i te pāmahana me te ara iahiko whakakaha tairongo mo te whakakore i te whakahiato aunoa, ka puta ko te 1012 te roanga o te huringa me te 7ns te tuhi me te 5ns te taima panui kua tutuki, koinei nga taumata pai rawa atu kua puta.
Ko te pepa "He 9-Mb HZO-based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh" i ahu mai i nga hua me te Offset-Canceled Sense Amplifier "i tohua i roto i te ISSCC 2023, a ko te maramara i tohua i roto i te huihuinga o te whakaaturanga tuatahi o te ISSCC Jiangusion. pepa, a ko Liu Ming te kaituhi.
Ko nga mahi e pa ana kei te tautokohia e te National Natural Science Foundation o Haina, te National Key Research and Development Programme o te Manatu Putaiao me te Hangarau, me te B-Class Pilot Project o te Chinese Academy of Sciences.
(Whakaahua o 9Mb Hafnium-based FeRAM chip and chip performance test)
Te wa tuku: Apr-15-2023
