SQJ951EP-T1_GE3 MOSFET Takirua-P 30V AEC-Q101 Kua Tohua
♠ Whakaahuatanga Hua
| Huanga Hua | Uara Huanga |
| Kaihanga: | Vishay |
| Kāwai Hua: | MOSFET |
| Hangarau: | Si |
| Kāhua Whakaeke: | SMD/SMT |
| Mōkī / Take: | PowerPAK-SO-8-4 |
| Polarity Transistor: | P-Hongere |
| Te maha o nga hongere: | 2 Hongere |
| Vds - Ngaohiko Wetewete Putake-Wai: | 30 V |
| Id - Wairere Tonu Naianei: | 30 A |
| Rds On - Atete Putake-Rawa: | 14 ohm |
| Vgs - Ngaohiko Puna-Kuti: | - 20 V, + 20 V |
| Vgs th - Ngaohiko Paepae Putake-Putake: | 2.5 V |
| Qg - Utu Keeti: | 50 nC |
| Paemahana Mahi Iti: | - 55 C |
| Paemahana Mahi Morahi: | + 175 C |
| Pd - Tohanga Hiko: | 56 W |
| Aratau Channel: | Whakanuia |
| Tohu: | AEC-Q101 |
| Ingoa Hokohoko: | TrenchFET |
| Tapeke: | Hurorirori kau |
| Tapeke: | Tapahia te Ripene |
| Tapeke: | KioreReel |
| Waitohu: | Vishay Semiconductors |
| Whirihoranga: | Takirua |
| Wā Hinga: | 28 ns |
| Momo Hua: | MOSFET |
| Wā Whakatika: | 12 ns |
| Rangatū: | SQ |
| Te Rahi Wheketere: | 3000 |
| Kāwairoto: | Nga MOSFET |
| Momo Transistor: | 2-P-Hongere |
| Wā Taarua Tahuri-Weto: | 39 ns |
| Wā Taarua Tahuri-Ai: | 12 ns |
| Wāhanga # Ingoaingoa: | SQJ951EP-T1_BE3 |
| Taumaha Waeine: | 0.017870 oz |
• Halogen-kore E ai ki te IEC 61249-2-21 Whakamaramatanga
• TrenchFET® Power MOSFET
• AEC-Q101 Tohu
• 100 % Rg me UIS Whakamatauria
• E tika ana ki te RoHS Directive 2002/95/EC
