SI2305CDS-T1-GE3 MOSFET -8V Vds 8V Vgs SOT-23
♠ Whakaahuatanga Hua
Huanga Hua | Uara Huanga |
Kaihanga: | Vishay |
Kāwai Hua: | MOSFET |
Hangarau: | Si |
Kāhua Whakaeke: | SMD/SMT |
Mōkī / Take: | SOT-23-3 |
Polarity Transistor: | P-Hongere |
Te maha o nga hongere: | 1 Channel |
Vds - Ngaohiko Wetewete Putake-Wai: | 8 V |
Id - Wairere Tonu Naianei: | 5.8 A |
Rds On - Atete Putake-Rawa: | 35 ohm |
Vgs - Ngaohiko Puna-Kuti: | - 8 V, + 8 V |
Vgs th - Ngaohiko Paepae Putake-Putake: | 1 V |
Qg - Utu Keeti: | 12 nC |
Paemahana Mahi Iti: | - 55 C |
Paemahana Mahi Morahi: | + 150 C |
Pd - Tohanga Hiko: | 1.7 W |
Aratau Channel: | Whakanuia |
Ingoa Hokohoko: | TrenchFET |
Tapeke: | Hurorirori kau |
Tapeke: | Tapahia te Ripene |
Tapeke: | KioreReel |
Waitohu: | Vishay Semiconductors |
Whirihoranga: | Takitahi |
Wā Hinga: | 10 ns |
Teitei: | 1.45 mm |
Roa: | 2.9 mm |
Momo Hua: | MOSFET |
Wā Whakatika: | 20 ns |
Rangatū: | SI2 |
Te Rahi Wheketere: | 3000 |
Kāwairoto: | Nga MOSFET |
Momo Transistor: | 1-P-Hongere |
Wā Taarua Tahuri-Weto: | 40 ns |
Wā Taarua Tahuri-Ai: | 20 ns |
Whānui: | 1.6 mm |
Wāhanga # Ingoaingoa: | SI2305CDS-T1-BE3 SI2305CDS-GE3 |
Taumaha Waeine: | 0.000282 oz |
• Halogen-kore E ai ki te IEC 61249-2-21 Whakamaramatanga
• TrenchFET® Power MOSFET
• 100 % Rg Whakamatauria
• E tika ana ki te RoHS Directive 2002/95/EC
• Whakawhiti Uta mo nga Pūrere Kawe
• Kaitahuri DC/DC