SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P takirua
♠ Whakaahuatanga Hua
| Huanga Hua | Uara Huanga |
| Kaihanga: | Vishay |
| Kāwai Hua: | MOSFET |
| RoHS: | Nga korero |
| Hangarau: | Si |
| Kāhua Whakaeke: | SMD/SMT |
| Mōkī/Puhi: | SC-89-6 |
| Polarity Transistor: | Hoirangi-N, Hoera-P |
| Te maha o nga hongere: | 2 Hongere |
| Vds - Ngaohiko Wetewete Putake-Wai: | 60 V |
| Id - Wairere Tonu Naianei: | 500 mA |
| Rds On - Atete Putake-Rawa: | 1.4 Ohms, 4 Ohms |
| Vgs - Ngaohiko Puna-Kuti: | - 20 V, + 20 V |
| Vgs th - Ngaohiko Paepae Putake-Putake: | 1 V |
| Qg - Utu Keeti: | 750 pC, 1.7 nC |
| Paemahana Mahi Iti: | - 55 C |
| Paemahana Mahi Morahi: | + 150 C |
| Pd - Tohanga Hiko: | 280 mW |
| Aratau Channel: | Whakanuia |
| Ingoa Hokohoko: | TrenchFET |
| Tapeke: | Hurorirori kau |
| Tapeke: | Tapahia te Ripene |
| Tapeke: | KioreReel |
| Waitohu: | Vishay Semiconductors |
| Whirihoranga: | Takirua |
| Whakawhiti Whakamua - Min: | 200 mS, 100 mS |
| Teitei: | 0.6 mm |
| Roa: | 1.66 mm |
| Momo Hua: | MOSFET |
| Rangatū: | SI1 |
| Te Rahi Wheketere: | 3000 |
| Kāwairoto: | Nga MOSFET |
| Momo Transistor: | 1-N, 1-P |
| Wā Taarua Tahuri-Weto: | 20 ns, 35 ns |
| Wā Taarua Tahuri-Ai: | 15 ns, 20 ns |
| Whānui: | 1.2 mm |
| Wāhanga # Ingoaingoa: | SI1029X-GE3 |
| Taumaha Waeine: | 32 mg |
• Halogen-kore E ai ki te IEC 61249-2-21 Whakamaramatanga
• Nga MOSFET Power TrenchFET®
• Tapuwae Tino Iti
• Te Whakawhiti-Tahi teitei
• Iti-Atete:
Hoirangi-N, 1.40 Ω
P-Hongere, 4 Ω
• Paepae Iti: ± 2 V (typ.)
• Tere Whakawhiti Tere: 15 ns (typ.)
• Kua Tiakihia te ESD-Source: 2000 V
• E tika ana ki te RoHS Directive 2002/95/EC
• Whakakapi i te Transistor Mamati, Whakawhiti Taumata
• Pūnaha Whakahaere Pūhiko
• Nga Whakawhiti Whakawhiti Hiko Hiko
