IKW50N65ES5XKSA1 IGBT Transistors INDUSTRIES 14
♠ Whakaahuatanga Hua
| Huanga Hua | Uara Huanga |
| Kaihanga: | Infineon |
| Kāwai Hua: | IGBT Transistors |
| Hangarau: | Si |
| Mōkī / Take: | TO-247-3 |
| Kāhua Whakaeke: | Na roto i te Kohao |
| Whirihoranga: | Takitahi |
| Kaikohi- Ngaohiko Tuku VCEO Max: | 650 V |
| Te Kohikohi-Emitter Putanga Ngaohiko: | 1.35 V |
| Morahi Ngaohiko Kaituku Keeti: | 20 V |
| Kohikohi Naianei i te 25 C: | 80 A |
| Pd - Tohanga Hiko: | 274 W |
| Paemahana Mahi Iti: | -40C |
| Paemahana Mahi Morahi: | + 175 C |
| Rangatū: | TRENCHSTOP 5 S5 |
| Tapeke: | ngongo |
| Waitohu: | Hangarau Infineon |
| Te Puti-Emitter Leakage Naianei: | 100 nA |
| Teitei: | 20.7 mm |
| Roa: | 15.87 mm |
| Momo Hua: | IGBT Transistors |
| Te Rahi Wheketere: | 240 |
| Kāwairoto: | Nga IGBT |
| Ingoa Hokohoko: | TRENCHSTOP |
| Whānui: | 5.31 mm |
| Wāhanga # Ingoaingoa: | IKW50N65ES5 SP001319682 |
| Taumaha Waeine: | 0.213537 oz |
HighspeedS5whakahere hangarau
•Whakawhitinga teretere mo te whakakorikori maamaa
•VCESAT Tino Iti, 1.35Vatnominalcurrent
•Plugandplayreplacement of previous generationIGBTs
•650Vbreakdownvoltage
•KuwahaitiQG
•IGBTcopacked withfullratedRAPID1fastantiparalleldiode
•Maximumjunctiontemperature175°C
•Kua whai tohu ki aJEDEC mo nga tono whainga
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
•Resonantconverters
•Ko nga hiko e kore e haukotia
• Weldingconverters
•Kaitahuri-auauaue-whakawhitinga teitei
